Method for manufacturing semiconductor optical device
文献类型：专利
| 作者 | HANAMAKI, YOSHIHIKO; NISHIDA, TAKEHIRO; TAKADA, MAKOTO; ONO, KENICHI |
| 发表日期 | 2010-03-23 |
| 专利号 | US7682857 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for manufacturing semiconductor optical device |
| 英文摘要 | A method for manufacturing a semiconductor optical device includes: forming a p-type cladding layer; forming a capping layer on the p-type cladding layer, the capping layer being selectively etchable relative to the p-type cladding layer; forming a through film on the capping layer; forming a window structure by ion implantation; removing the through film after the ion implantation; and selectively removing the capping layer using a chemical solution. |
| 公开日期 | 2010-03-23 |
| 申请日期 | 2008-01-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73715]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | HANAMAKI, YOSHIHIKO,NISHIDA, TAKEHIRO,TAKADA, MAKOTO,et al. Method for manufacturing semiconductor optical device. US7682857. 2010-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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