Method for manufacturing photoelectric conversion device
文献类型：专利
| 作者 | ARAI, YASUYUKI; YAMAZAKI, SHUNPEI |
| 发表日期 | 2010-06-15 |
| 专利号 | US7736933 |
| 著作权人 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for manufacturing photoelectric conversion device |
| 英文摘要 | To form a microcrystalline semiconductor with high quality which can be directly formed at equal to or less than 500° C. over a large substrate with high productivity without decreasing a deposition rate. In addition, to provide a photoelectric conversion device which employs the microcrystalline semiconductor as a photoelectric conversion layer. A reactive gas containing helium is supplied to a treatment chamber which is surrounded by a plurality of juxtaposed waveguides and a wall, the pressure in the treatment chamber is maintained at an atmospheric pressure or a subatmospheric pressure, microwave is supplied to a space sandwiched between the juxtaposed waveguides to generate plasma, and a photoelectric conversion layer of a microcrystalline semiconductor is deposited over a substrate which is placed in the treatment chamber. |
| 公开日期 | 2010-06-15 |
| 申请日期 | 2008-07-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73718]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 推荐引用方式 GB/T 7714 | ARAI, YASUYUKI,YAMAZAKI, SHUNPEI. Method for manufacturing photoelectric conversion device. US7736933. 2010-06-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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