中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device and method for fabricating the same

文献类型:专利

作者TAKAYAMA, TORU; MURASAWA, SATOSHI; FUJIMOTO, YASUHIRO; NAKAYAMA, HISASHI; KIDOGUCHI, ISAO
发表日期2010-04-27
专利号US7704759
著作权人PANASONIC CORPORATION
国家美国
文献子类授权发明
其他题名Semiconductor laser device and method for fabricating the same
英文摘要In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
公开日期2010-04-27
申请日期2008-09-11
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/73722]  
专题半导体激光器专利数据库
作者单位PANASONIC CORPORATION
推荐引用方式
GB/T 7714
TAKAYAMA, TORU,MURASAWA, SATOSHI,FUJIMOTO, YASUHIRO,et al. Semiconductor laser device and method for fabricating the same. US7704759. 2010-04-27.

入库方式: OAI收割

来源:西安光学精密机械研究所

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