Semiconductor laser device and method for fabricating the same
文献类型:专利
作者 | TAKAYAMA, TORU; MURASAWA, SATOSHI; FUJIMOTO, YASUHIRO; NAKAYAMA, HISASHI; KIDOGUCHI, ISAO |
发表日期 | 2010-04-27 |
专利号 | US7704759 |
著作权人 | PANASONIC CORPORATION |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser device and method for fabricating the same |
英文摘要 | In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements. |
公开日期 | 2010-04-27 |
申请日期 | 2008-09-11 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/73722] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | PANASONIC CORPORATION |
推荐引用方式 GB/T 7714 | TAKAYAMA, TORU,MURASAWA, SATOSHI,FUJIMOTO, YASUHIRO,et al. Semiconductor laser device and method for fabricating the same. US7704759. 2010-04-27. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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