Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
文献类型：专利
| 作者 | CHUA, SOON JIN; ZHOU, HAILONG; LIN, JIANYI; PAN, HUI |
| 发表日期 | 2011-05-31 |
| 专利号 | US7951639 |
| 著作权人 | NATIONAL UNIVERSITY OF SINGAPORE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template |
| 英文摘要 | A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm−2, which will find important applications in future electronic and optoelectronic devices. |
| 公开日期 | 2011-05-31 |
| 申请日期 | 2008-10-24 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73725]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NATIONAL UNIVERSITY OF SINGAPORE |
| 推荐引用方式 GB/T 7714 | CHUA, SOON JIN,ZHOU, HAILONG,LIN, JIANYI,et al. Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template. US7951639. 2011-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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