Optical semiconductor device and method for manufacturing the same
文献类型：专利
| 作者 | YAMAMOTO, TSUYOSHI; MATSUDA, MANABU |
| 发表日期 | 2012-11-27 |
| 专利号 | US8319229 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device and method for manufacturing the same |
| 英文摘要 | An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a λ/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side. |
| 公开日期 | 2012-11-27 |
| 申请日期 | 2010-09-13 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73727]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | YAMAMOTO, TSUYOSHI,MATSUDA, MANABU. Optical semiconductor device and method for manufacturing the same. US8319229. 2012-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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