Semiconductor laser device and method of manufacturing the same
文献类型：专利
| 作者 | HIROYAMA, RYOJI; INOUE, DAIJIRO; BESSHO, YASUYUKI; HATA, MASAYUKI |
| 发表日期 | 2012-06-05 |
| 专利号 | US8193016 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method of manufacturing the same |
| 英文摘要 | A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region. |
| 公开日期 | 2012-06-05 |
| 申请日期 | 2011-01-06 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73729]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | HIROYAMA, RYOJI,INOUE, DAIJIRO,BESSHO, YASUYUKI,et al. Semiconductor laser device and method of manufacturing the same. US8193016. 2012-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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