Semiconductor laser device and method of fabricating the same
文献类型：专利
| 作者 | KIM, IN GYOO; KIM, GYUNGOCK; KIM, SANG HOON; JOO, JIHO; JANG, KI SEOK |
| 发表日期 | 2015-02-03 |
| 专利号 | US8948224 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method of fabricating the same |
| 英文摘要 | The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device. |
| 公开日期 | 2015-02-03 |
| 申请日期 | 2012-07-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73735]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | KIM, IN GYOO,KIM, GYUNGOCK,KIM, SANG HOON,et al. Semiconductor laser device and method of fabricating the same. US8948224. 2015-02-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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