Semiconductor laser
文献类型：专利
| 作者 | NIDOU MASAAKI |
| 发表日期 | 1987-09-19 |
| 专利号 | JP1987213189A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the luminous efficiency of an active layer and lengthen life without damaging an internal current constriction effect by forming an n-type laser having low concentration of not more than half the concentration of a p-type clad layer between the p-type clad layer and a high-concentration n-type block layer. CONSTITUTION:A semiconductor laser is constituted of an n-type GaAs substrate 1, an n-type Al0.45Ga0.55As clad layer 2, an Al0.15Ga0.85As active layer 3, a p-type Al0.45Ga0.55As clad layer 4, a low-concentration n-type GaAs layer 5, a high- concentration n-type GaAs block layer 6, a groove 7, a p-type Al0.45Ga0.55As layer 8, a p-type GaAs layer 9, a p electrode 10 and an n electrode 1 The p concentration of the p-type clad layer 4 is brought to 4X10cm and layer thickness thereof to 0.3mum, then n concentration of the low-concentration n-type GaAs layer 5 to 1X10cm and layer thickness thereof to 0.2mum, and the n concentration of the high-concentration n-type GaAs block layer 6 to 5X10cm and layer thickness thereof to 1mum at that time. The n-type GaAs layers 5, 6 function as optical absorption layers for loss light guides and current block layers. |
| 公开日期 | 1987-09-19 |
| 申请日期 | 1986-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73748]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NIDOU MASAAKI. Semiconductor laser. JP1987213189A. 1987-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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