Semiconductor laser device
文献类型：专利
| 作者 | NISHIMOTO HIROYUKI |
| 发表日期 | 1990-12-04 |
| 专利号 | JP1990292884A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To effectively concentrate a high frequency current on an active layer to enable a semiconductor laser device of this design to execute a super- high speed modulation by a method wherein a part other than the vicinity of a light emitting region is covered with a high resistance semiconductor layer or the like. CONSTITUTION:An InP high resistance layer 9 is laminated on an N-InP substrate 1, the InP high resistance layer 9 is removed leaving a part of it unremoved so as to expose the N-InP substrate 1 for the formation of an inverted mesa-shaped step. An N-InP buffer layer 2, an InGaAsP active layer 3, a P-InP clad layer 4, and a P-InAsGaP contact layer 5 are successively laminated on the P-InP substrate 1 bringing the ends of them into contact with the inverted mesa-shaped step. The other ends of the InGaAsP active layer 3, the P-InP clad layer 4, and the P-InGaAsP contact layer 5 are etched to form a continuous reverse mesa-shaped step. As the InGaAsP active layer 3 is surrounded with a high resistance semiconductor layer or air, nearly all the signal current injected from a P-side electrode 7 is made to flow through the InGaAsP active layer, and consequently a semiconductor laser device of this design has a structure excellent in response characteristic to high frequency. |
| 公开日期 | 1990-12-04 |
| 申请日期 | 1989-05-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73751]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NISHIMOTO HIROYUKI. Semiconductor laser device. JP1990292884A. 1990-12-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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