Semiconductor light emitting element
文献类型：专利
| 作者 | YOSHIDA KATSUJI; OOSAKA SHIGEO |
| 发表日期 | 1985-02-26 |
| 专利号 | JP1985037192A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To adjust the central light emitting wave length exactly to specified value by a method wherein, in a double heterojunction type semiconductor light emitting element, thin layers with band gap smaller than an energy equivalent to specified light emitting wave length is provided on both sides of an active layer. CONSTITUTION:An N type AlGaAs layer as the first clad layer 2, the first thin layer 3, an active layer 4, the second thin layer 5 respectively made of AlxGa1-xAs, a P type AlGaAs layer as the second clad layer 6, a P type GaAs cap layer 7 are laminated on an N type GaAs crystal substrate The band 9 of the thin layers 3, 5 is made smaller than that of the active layer 4. The energy level will rise steeply toward the region of active layer 4 due to existence of the thin layers 3, 5 providing the active layer with a flat region. Most of the carriers implanted in the active layer region may transit between bands with even energy gap to be recoupled while light may be emitted at nearly single wave length with the central wave length of the emitted light exactly adjusted to (x) value of the active layer 4. |
| 公开日期 | 1985-02-26 |
| 申请日期 | 1983-08-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73753]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | YOSHIDA KATSUJI,OOSAKA SHIGEO. Semiconductor light emitting element. JP1985037192A. 1985-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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