Semiconductor light-emitting device
文献类型：专利
| 作者 | NISHI KENICHI |
| 发表日期 | 1988-03-16 |
| 专利号 | JP1988060571A |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To reduce the temperature change of an optical output, and to reduce cost and improve reproducibility by making a refractive index higher than first and second semiconductor layers holding a light-emitting region semiconductor, narrowing forbidden band width, altering forbidden band width in the direction of laminating and doping an impurity as a non-radiative center into a narrow region in the light- emitting region semiconductor. CONSTITUTION:An S-doped n-type InP buffer layer 12, a light-emitting region 15 consisting of an un-doped InGaAsP layer 13 and an Fe-doped InGaAsP layer 14, a Zn-doped p-type InP clad layer 16, and a Zn-doped p-type InGaAs cap layer 17 are laminated onto an S-doped n-type InP substrate 11 in succession, p-n-p structure 18 normally used for current constriction to the substrate is laminated around the lightemitting region 15, and electrodes 19 are shaped onto an upper surface and a lower surface. Both a conduction-band lower end and a valence-band upper end intermittently vary regarding the direction of laminating in the forbidden band width of the light-emitting region 15 at that time, and an impurity forming a non-radiative center is doped only to the layer 14 having narrow forbidden band width. Accordingly, reproducibility is improved and cost can be reduced while the temperature dependency of an optical output is also minimized. |
| 公开日期 | 1988-03-16 |
| 申请日期 | 1986-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73756]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | NISHI KENICHI. Semiconductor light-emitting device. JP1988060571A. 1988-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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