Semiconductor laser
文献类型：专利
| 作者 | IKUWA YOSHITO; YAMASHITA KOUJI |
| 发表日期 | 1983-09-16 |
| 专利号 | JP1983155786A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To narrow the vertical radiation angle of laser lights by bending a P-N junction surface to the side separate from a waveguide in the vicinity of an least one resonator surface while making a region, in which the extended section of the waveguide and the resonator surface are in contact with each other, to be a high-concentration impurity diffusion region. CONSTITUTION:The P-N junction surfaces 14, 14' in the vicinity of laser resonators 10, 10' from which laser lights are emitted are bent, and a light-emitting region 15 in resonator surfaces is brought to the high-concentration P region by the bending. A refractive index of GaAlAs decreases with the increase of the carrier concentration of the P region, but an active layer 3 of a small composition rate of Al is larger than clad layers 2, 4 of a large composition rate of Al in the rate of change of GaAlAs. Accordingly, difference between the refractive indices of the active layer 3 and the clad layers 2, 4 decreases, confinement in the vertical direction of lights to each layer 2-4 is reduced, and the radiation angle is narrowed. |
| 公开日期 | 1983-09-16 |
| 申请日期 | 1982-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73773]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | IKUWA YOSHITO,YAMASHITA KOUJI. Semiconductor laser. JP1983155786A. 1983-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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