半導体レーザ素子
文献类型:专利
作者 | 田中 俊明; 河野 敏弘; 梶村 俊 |
发表日期 | 1999-04-09 |
专利号 | JP2912624B2 |
著作权人 | 株式会社日立製作所 |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | 半導体レーザ素子 |
英文摘要 | PURPOSE:To improve the high output and low noise characteristic by constructing an active layer of a single quantum well layer and superlattice multiple quantum well layers provided on the upper and lower surfaces thereof and forming a ridged waveguide structure for obtaining a self-oscillating laser element. CONSTITUTION:An active layer is constructed of a single quantum well layer 5 and superlattice multiple quantum well layers 4, 6 provided on the upper and lower surfaces thereof, and composition, film thickness, and impurity concentration of respective layers 4, 5, 6 are caused by have predetermined values. A light waveguide layer, on the opposite side of a semiconductor substrate with respect to the active layer, has a mesa-stripe-like ridged part extending in the resonator length direction, and light absorption and current constriction parts are formed on the light waveguide layer with the ridge part at the both ends of the ridged part, and self-oscillation is effected. Therefore, the laser light distribution is controlled and the light absorption layer is provided at a predetermined position relative to the active layer, so that the effective refraction index difference in the lateral direction of the active layer can be caused to have a desired value. Thus, a high output characteristic required by a writing and erasing light source for an optical disk, and a low noise characteristic required by a reading light source can be obtained. |
公开日期 | 1999-06-28 |
申请日期 | 1989-03-01 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/73775] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 株式会社日立製作所 |
推荐引用方式 GB/T 7714 | 田中 俊明,河野 敏弘,梶村 俊. 半導体レーザ素子. JP2912624B2. 1999-04-09. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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