Semiconductor laser device
文献类型：专利
| 作者 | UOMI KAZUHISA; KAYANE NAOKI; OTOSHI SO; MORIOKA MAKOTO; MISHIMA TOMOYOSHI |
| 发表日期 | 1987-08-17 |
| 专利号 | JP1987188390A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a high speed semiconductor laser element capable of performing direct modulation exceeding 10GHz of threshold frequency by a method wherein the barrier layer of the quantum well active layer of the quantum well type laser is doped with high concentration P-type impurities. CONSTITUTION:At a semiconductor laser device having a multiple quantum well active layer formed by piling up alternately a well layer 3 of thickness thinner than de Broglie wavelength of electrons and a barrier layer 4 having forbidden bandwidth larger than that of the well layer 3, the type of conduction of the barrier layer 4 is made to be a P-type. For example, an N-type Ga1-xAlxAs clad layer 2 is grown according to the organic metal vapor growth method on an N-type GaAs substrate 1, and a multiple quantum well construction is grown thereon. The multiple quantum well layer is formed by growing alternately an undoped Ga1-yAlyAs well layer (y=0-0.2, thickness is 3-10nm) 3 and a P-type Ga1-zAlzAs barrier layer (z>y, thickness is 3-20nm) 4 to the 2-10 layers. Then a P-type Ga1-xAlxAs layer 5 and a P-type GaAs layer 6 are grown, a P-side electrode Cr-Au 7 and an N-side electrode AuGeNi-Au 8 are evaporated, and the unit is cut off to obtain a laser element. |
| 公开日期 | 1987-08-17 |
| 申请日期 | 1986-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73785]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | UOMI KAZUHISA,KAYANE NAOKI,OTOSHI SO,et al. Semiconductor laser device. JP1987188390A. 1987-08-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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