Semiconductor laser
文献类型：专利
| 作者 | TAKEUCHI YOSHINORI; TAKENAKA NAOKI |
| 发表日期 | 1987-06-08 |
| 专利号 | JP1987126684A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a high-quality, super-high-speed, optical modulating signal of 10GHz or more without wavelength fluctuation, by providing a pair of light modulating parts, which are constituted by materials or multilayer films, where one or both of light reflectivity or light absorbance are changed with the change in electric fields are current density, and electrodes, which are independent of current injecting electrodes, at both end surfaces of an active layer. CONSTITUTION:One or both of light reflectivity and light absorbance of materials or multilayer films 5a and 5b are changed with the change in electric field or current density. A pair of light modulating parts is formed by the films 5a and 5b and electrodes 7a and 7b, which are independent of current injecting electrodes 2a and 2b, are provided neighboring both end surfaces of an active layer 1 in the light propagating direction of a lightguide forming active layer For example, on a substrate 3, a clad layer 4b, the active layer 1 and a clad layer 4a are formed. The current injecting electrodes 2a and 2b are provided on the upper and lower surfaces. On both end surfaces, the dielectric thin films 5a and 5b having a large electrooptical effects, transparent electrodes 6a and 6b, parts 8a and 8b having a large current density and the electrodes 7a and 7b are further provided. Thus a pair of the modulating parts is formed. A modulating signal is applied to one of the light modulating parts, and a signal, which is electrically inverted from said modulating signal, is applied to the other light modulating part. Thus modulation is performed. |
| 公开日期 | 1987-06-08 |
| 申请日期 | 1985-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73791]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKEUCHI YOSHINORI,TAKENAKA NAOKI. Semiconductor laser. JP1987126684A. 1987-06-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。