Semiconductor laser device
文献类型：专利
| 作者 | INOUE TOKUO; OGATA SHIRO; AOYAMA SHIGERU |
| 发表日期 | 1989-06-20 |
| 专利号 | JP1989157586A |
| 著作权人 | OMRON TATEISI ELECTRON CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To establish a stable external resonator with a high coupling efficiency by providing an external mirror which is made by coating a reflecting film on the back of a micro-Fresnel lens, and displacing the Fresnel lens with respect to a semiconductor laser using a piezoelectric element. CONSTITUTION:The back of a lens member 2 is flattened, and a reflecting film 22 such as gold or silver is formed by vaporization on the flattened part and adjusted in its reflectivity to r=1, for example. The back of the lens member 2 is fixed to a piezoelectric element 3 using a resin adhesive, and is made variable in its position on the optical axis of an emitted laser beam from a semiconductor laser 1 by means of the piezoelectric element. The emitted laser beam from the semiconductor laser 1 is collimated by the Fresnel lens 21, and reflected by the reflecting film 22 coated on the back of the flat plate micro- Fresnel lens 21, and thereby fed back in the opposite direction on the same optical axis of the emitted laser beam to the semiconductor laser |
| 公开日期 | 1989-06-20 |
| 申请日期 | 1987-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73801]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRON CO |
| 推荐引用方式 GB/T 7714 | INOUE TOKUO,OGATA SHIRO,AOYAMA SHIGERU. Semiconductor laser device. JP1989157586A. 1989-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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