半導体レーザおよびその製造方法
文献类型：专利
| 作者 | 平田 隆昭 |
| 发表日期 | 1995-11-13 |
| 专利号 | JP1995105566B2 |
| 著作权人 | 光計測技術開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザおよびその製造方法 |
| 英文摘要 | PURPOSE:To obtain a compact, stable semiconductor laser excellent in single mode property and narrow in light emitting spectrum-ray width by forming an active region and an outer resonator on the same substrate. CONSTITUTION:A cap layer 12 is etched, and an active region is formed. A clad layer 11 is further etched, and ridges 13 and 14 are formed. A first waveguide and a second waveguide are formed in the region. The second waveguide is formed so as to pass a region where a diffraction grating 10 is provided. The region where the diffraction grating is provided becomes a Bragg reflector 15. This element is provided with the following parts: an active region which is formed with a semiconductor, i.e., a region where the cap 12 is provided; and an outer resonator which reflects the output light from the active region and feeds back the light into the active region. The outer resonator includes the first waveguide in which the output light from the active region is inputted and the second waveguide in which the light beams are combined between the first waveguide and the second waveguide. The Bragg reflector 15 which reflects the light having specified wavelength that is included in the light from the first waveguide is included in the second waveguide. |
| 公开日期 | 1995-11-13 |
| 申请日期 | 1988-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73806]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光計測技術開発株式会社 |
| 推荐引用方式 GB/T 7714 | 平田 隆昭. 半導体レーザおよびその製造方法. JP1995105566B2. 1995-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。