Semiconductor laser
文献类型：专利
| 作者 | NIINA TATSUHIKO; YOSHITOSHI KEIICHI |
| 发表日期 | 1983-10-17 |
| 专利号 | JP1983176990A |
| 著作权人 | SANYO DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a long life semiconductor laser which does not show any thermal deterioration and crystal distortion due to difference of thermal expansion coefficients and also has excellent heat radiating characteristic, by forming a buried layer of cap layer with a Ca-doped ZnSe. CONSTITUTION:A buried layer 7 of a cap layer 6 in a semiconductor laser is composed of a Ca-doped ZnSe and therefore it has a lattice constant and thermal expansion coefficient which are almost equal respectively to that of an oscillating layer 2 consisting of GaAl As system material. Therefore, crystal distortion is not generated in the oscillating layer 2 and thermal deterioration is also not generated in the oscillating layer 2 because ZnSe can be grown even under a temperature as low as 400 deg.C by the molecular beam epitaxial growth method. Moreover, since ZnSe has a very high thermal conductivity, there is no fear of generating breakdown of semiconductor laser due to a heat generated during continuous oscillation. In addition, since a buried layer 7 consisting of ZnSe to which Ga is added is n type, electrode is respectively formed on the surface of cap layer 6 and rear side of substrate 1 and a forward bias is applied across these electrodes. As a resutl, the buried layer 7 substantially has a high resistance value. Therefore, an applied current is squeezed by the buried layer 7 and the main current path is formed just under the cap layer 6. |
| 公开日期 | 1983-10-17 |
| 申请日期 | 1982-04-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73819]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO DENKI KK |
| 推荐引用方式 GB/T 7714 | NIINA TATSUHIKO,YOSHITOSHI KEIICHI. Semiconductor laser. JP1983176990A. 1983-10-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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