Semiconductor laser
文献类型：专利
| 作者 | OOTOSHI SOU; KOUNO TOSHIHIRO; KAJIMURA TAKASHI; KAYANE NAOKI; NAKAMURA MICHIHARU |
| 发表日期 | 1984-12-20 |
| 专利号 | JP1984227177A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain stabilized transverse mode oscillations by a method wherein, when a clad layer, an active layer, an optical guide layer and a clad layer are laminatedly grown on a semiconductor substrate, these layers are formed into a mesa form and a semiconductor laser is constituted by surrounding these layers with a layer having a forbidden band width wider than that of the active layer and having a smaller refractive index than that, the thickness of the clad layer adjacent to the optical guide layer is set at 0.1mum or less and at the same time, a layer, which has a light absorption function, is provided thereon. CONSTITUTION:An N type Ga0.70Al0.30As clad layer 2, an undoped Ga0.86Al0.14As active layer 3, an N type Ga0.74Al0.26As optical guide layer 4, a P type Ga0.55Al0.45 clad layer 5 of a thickness of 0.1mum or less and a P type Ga0.88Al0.20As layer 6 having a function of light absorption are laminatedly grown on an N type GaAs substrate Then, these layers are processed in a mesa form and surrounded with a P type Ga0.55Al0.45As buried layer 7 provided in the surface layer part of the substrate 1 and an N type Ga0.55Al0.45As buried layer 8, which is located on the buried layer 7 and has a forbidden band width wider than that of the layer 3, and at the same time, has a smaller refractive index. |
| 公开日期 | 1984-12-20 |
| 申请日期 | 1983-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73838]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | OOTOSHI SOU,KOUNO TOSHIHIRO,KAJIMURA TAKASHI,et al. Semiconductor laser. JP1984227177A. 1984-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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