Semiconductor laser
文献类型：专利
| 作者 | TERAKADO TOMOJI |
| 发表日期 | 1990-03-26 |
| 专利号 | JP1990083991A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make the capacitance of a semiconductor laser smaller than a given value and improve reproducibility and reliability by a method wherein a part of a buried semiconductor layer is selectively removed and constriction is formed without exposing the surrounding of an active layer to air. CONSTITUTION:A clad layer 11, an active layer 12, and a clad layer 13 are grown on a semiconductor substrate 10. After a stripe active area 21 is formed, push-in layers 14, 15, and 16, and a contact layer 17 are grown. Next, a p-type electrode 18 is formed in a stripe form on the contact layer 17 above the active layer 12. With the p-type electrode 18 as a mask, the contact layer 17 and the push-in layer 16 are etched. Then, the layer 15 is selectively etched and removed using the layer 16 as a mask, forming constriction 19. Further, after the rear surface of the substrate 10 is polished, an n-type electrode 20 is formed and a semiconductor laser is obtained. |
| 公开日期 | 1990-03-26 |
| 申请日期 | 1988-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73841]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TERAKADO TOMOJI. Semiconductor laser. JP1990083991A. 1990-03-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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