Semiconductor laser
文献类型：专利
| 作者 | FURUSE TAKAO |
| 发表日期 | 1985-06-13 |
| 专利号 | JP1985107885A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to maintain superior low-noise characteristics even during either write-in and readout by a method wherein plural semiconductor lasers, whose mesa widths are different from each other, are formed on the same semiconductor substrate at prescribed intervals. CONSTITUTION:N type AlGaAs layers 2 and 3, an AlGaAs layer 4 to be turned into an active layer, a P type AlGaAs layer 5, a P type AlGaAs layer 6 and a P type GaAs layer 7 are successively formed on the same substrate, N type GaAs substrate 1, in each of an A part and a B part of the substrate In each of the A part and the B part, a mesa etching is respectively performed up to reach the substrate 1 to form plural places of belt-shaped mesa regions. Then etching is performed then layer 5 and layer 4 are etched to form a neck 8. For example, the layer width of the layer 4 of the A part is formed in about 1mum, while that of the B part is formed in about 2mum. AlGaAs layers 10 and 11, each having a larger forbidden band width than that of the layer 4, are successively formed in such a way as to bury the sides of both mesa regions, and buried semiconductor lasers A and B are formed. In this constitution, in case an optical recording is performed on a recording medium, the recording is performed on a recording medium, the recording is performed at higher photo output using the laser B, while in case a readout of recorded results is perfoemed, the readout is performed at lower photo output using the laser A. |
| 公开日期 | 1985-06-13 |
| 申请日期 | 1983-11-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73846]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | FURUSE TAKAO. Semiconductor laser. JP1985107885A. 1985-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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