Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | HIRAYAMA NORIYUKI; OSHIMA MASAAKI; TAKENAKA NAOKI; TSURUTA TORU |
| 发表日期 | 1987-06-12 |
| 专利号 | JP1987130583A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To eliminate an increase in a threshold current, a decrease in a quantum efficiency and a saturation in a light output due to a leakage current component by forming a double hetero structure which contains an active layer in a stripe groove of a semi-insulating substrate. CONSTITUTION:A stripe groove is formed on an Fe-doped semi-insulating InP substrate When a P-type InP clad layer 2, an n-type an n-type InGaAsP active layer 3, and an n-type InP clad layer 4 are laminated on the substrate 1 to form a semiconductor laser, a double hetero structure which contains the layers 2, 3 in the stripe groove is formed. Only the groove becomes conductive with this structure, and a current is interrupted by the substrate 1 to feed no leakage current. Accordingly, an increase in a threshold current, a decrease in a quantum efficiency and a saturation in a light output due to a leakage current component can be eliminated. |
| 公开日期 | 1987-06-12 |
| 申请日期 | 1985-12-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73854]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HIRAYAMA NORIYUKI,OSHIMA MASAAKI,TAKENAKA NAOKI,et al. Semiconductor laser and manufacture thereof. JP1987130583A. 1987-06-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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