Semiconductor laser device
文献类型：专利
| 作者 | TODOROKI SATORU; OBE ISAO |
| 发表日期 | 1987-02-25 |
| 专利号 | JP1987043191A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make a current injected from an electrode to flow into a P-type semiconductor clad layer without passing the end part of a stripe groove, which is a dislocation generating source, by providing the electrode, which is formed on the surface of a semiconductor substrate so that the electrode is separated from the end part (bottom part) of the stripe groove by the diffusion distance of minority carriers. CONSTITUTION:An electrode is provided so that it is separated from the end part of a stripe groove at least by the diffusion distance of minority carriers. Thus, a current, which is injected from the electrode, flows into a P-type Ga1-xAlxAs clad layer 4 without passing through the end part of the groove, which is a dislocation generating source. A reverse P-N junction, which comprises an N-type GaAs current blocking layer 3 and a P-type Ga1-xAlxAs clad layer 4, functions as a current blocking layer. A P-type GaAs layer 2 is provided beneath the N-type GaAs layer 3 and has good conductivity. Therefore effective current is supplied to an N-type or P-type Ga1-yAlyAs active layer 5, and confinement of light can be achieved. Therefore, the oscillating threshold current is not increased, and crystal defects as shown in conventional structures are not yielded and deterioration does not occur. |
| 公开日期 | 1987-02-25 |
| 申请日期 | 1985-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73859]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TODOROKI SATORU,OBE ISAO. Semiconductor laser device. JP1987043191A. 1987-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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