Semiconductor laser
文献类型：专利
| 作者 | MISE KAZUAKI; TSUCHIYA TOSHIO |
| 发表日期 | 1986-04-08 |
| 专利号 | JP1986067980A |
| 著作权人 | ANRITSU CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the laser of a stable lateral mode by a method wherein a buffer layer, an active layer and a clad layer are grown on a III-V group compound semiconductor crystal to form a mesa structure and the active layer in the middle is etched to be narrowed the width and recessed inward and the first and second buried layers are deposited around the mesa with filling the grooves. CONSTITUTION:A P type InP buffer layer 22, an InGaAs active layer 23, and an N type InP clad layer 24 are laminated and epitaxially grown on a P type InP substrate 21 having a (100) plane to form a double heterod structure. Nextly a mask of an insulating film 25 along direction is arranged on the layer 24 and etching is done to form the mesa structure in which the bottom plane of the laminar body is recessed into the layer 22. After that, etching is made by use of another etching solution to narrow a width of the active layer 23 located in the middle and produce horizontal grooves 26a and 26b on both sides of said layer 23. Nextly a laminar body of an N type InP layer 27 and a P type InP layer 28 fill both sides of the mesa structure with filling the grooves thereby offering the laser which operates at a low threshold value. |
| 公开日期 | 1986-04-08 |
| 申请日期 | 1984-09-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73866]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU CORP |
| 推荐引用方式 GB/T 7714 | MISE KAZUAKI,TSUCHIYA TOSHIO. Semiconductor laser. JP1986067980A. 1986-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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