Semiconductor laser device
文献类型：专利
| 作者 | GOMYO AKIKO |
| 发表日期 | 1989-10-19 |
| 专利号 | JP1989262686A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To contrive an increase in the efficiency of a head for an optical disc and an increase in the reliability of the head by a method wherein laser oscillation wavelengths in a double hetero structure on first and second surfaces equivalent to the face (001) and face (110) of a GaAs substrate are made to differ from each other. CONSTITUTION:A stepped n-type GaAs substrate 101 having the face (001) and the As face (111) as growth surfaces is formed. An Se-doped n-type GaAs buffer layer 102, an Se-doped n-type (Al0.4Ga0.6)0.5In0.5P clad layer 103, an undoped Ga0.5In0.5P active layer 104, an undoped Ga0.5In0.5P active layer 110 on the face (111) of As, a Zn-doped p-type (Al0.4Ga0.6)0.5In0.5P layer 105, a Zn- doped p-type GaAs layer 106 and an Se-doped n-type GaAs current blocking layer 107 are grown in order on the substrate 101 to form a current injection region and moreover, a p-type GaAs ohmic contact layer 108 is grown on the side of the Zn-doped p-type GaAs layer. Then, two semiconductor lasers are removed by etching up to the substrate 101, are isolated from each other and a p-type electrode 109 and an n-type electrode 110 are formed. Thereby, a secondary integration type semiconductor laser having oscillation wavelengths of 0.68mum and 0.65mum is obtained. |
| 公开日期 | 1989-10-19 |
| 申请日期 | 1988-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73870]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | GOMYO AKIKO. Semiconductor laser device. JP1989262686A. 1989-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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