Optical semiconductor device
文献类型：专利
| 作者 | KAMIGUCHI, YUZO; HIRAYAMA, YUZO; SAHASHI, MASASHI |
| 发表日期 | 2000-03-28 |
| 专利号 | US6043515 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | An optical semiconductor device has a structure in which a semiconductor active layer is sandwiched by a p-type semiconductor cladding layer and an n-type semiconductor cladding layer and a p-type contact layer is formed on the p-type semiconductor cladding layer side and an n-type contact layer is formed on the n-type semiconductor cladding layer side, wherein two ferromagnetic layers are formed on the n-type contact layer and two ferromagnetic layers are formed on the p-type contact layer. Magnetization directions of a pair of ferromagnetic layers vertically opposed to each other are set to be parallel to each other, and the magnetization directions of adjacent ferromagnetic layers are inverted to each other. |
| 公开日期 | 2000-03-28 |
| 申请日期 | 1997-09-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73872]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | KAMIGUCHI, YUZO,HIRAYAMA, YUZO,SAHASHI, MASASHI. Optical semiconductor device. US6043515. 2000-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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