Semiconductor laser element
文献类型：专利
| 作者 | KASHIWADA YASUTOSHI; AIKI KUNIO; KAJIMURA TAKASHI; YAMASHITA SHIGEO; KOUNO TOSHIHIRO |
| 发表日期 | 1985-03-04 |
| 专利号 | JP1985041279A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To eliminate the absorption of a laser light at a reflecting surface and the temperature rise occurred by the absorption by bending and providing an active layer near the laser light emitting mirror. CONSTITUTION:An active layer 4 is bent near the reflecting surfaces 10, 11 for emitting laser lights 8, 9. The element is formed by forming Ga1-xAlxAs and GaAs layers 3, 4 on an N type GaAs substrate formed with grooves designated by hatched lines (e), (g) and then performing typical laser element forming steps. Thus, the laser light is not emitted via the active layer from the reflecting surfaces but emitted from a clad layer having wide forbidden band width adjacent to the active layer. Accordingly, the absorption of the laser light at the reflecting surface and the temperature rise by the absorption can be eliminated. |
| 公开日期 | 1985-03-04 |
| 申请日期 | 1984-07-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73876]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KASHIWADA YASUTOSHI,AIKI KUNIO,KAJIMURA TAKASHI,et al. Semiconductor laser element. JP1985041279A. 1985-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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