Semiconductor laser device
文献类型：专利
| 作者 | SATO SHIRO |
| 发表日期 | 1987-07-14 |
| 专利号 | JP1987158379A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce threshold currents easily, and to obtain a stable mode by forming a mesa-striped projection onto one surface of a substrate and shaping a pair of optical confinement layers, to upper and lower sections thereof active layers are sandwiched, onto the projection. CONSTITUTION:A mesa-striped projection 1a is formed to the upper surface of an N-type GaAs substrate 1 through photolithography and etching. An N-type AlGaAs first optical confinement layer 2, a GaAs active layer 3, a P-type AlGaAs second optical confinement layer 4 and an N-type GaAs current stopping layer 5 are laminated in succession on the upper surface, to which the projection 1a is shaped, of the substrate 1 through an organic metal vapor-phase growth method. A mesa-striped groove 5b reaching the second optical confinement layer 4 is formed to the current stopping layer 5 by using a photolithographic technique and an etching liquid having selectivity in the top section of a projecting section 5a in the current stopping layer 5. An electrode layer 6 consisting of P-type GaAs is shaped on the current stopping layer 5 and in the groove 5b in the layer 5 by employing a liquid-phase epitaxial growth method. |
| 公开日期 | 1987-07-14 |
| 申请日期 | 1985-12-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73884]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | SATO SHIRO. Semiconductor laser device. JP1987158379A. 1987-07-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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