-
文献类型：专利
| 作者 | TAKAGI JUNKO; HAYAKAWA TOSHIRO; OOTSUKA NAOTAKA |
| 发表日期 | 1987-08-14 |
| 专利号 | JP1987037903B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To reduce a threshold current and improve an element life by a method wherein in a light emitting element which has an upside down type mounted structure and current squeezing means for getting a minute radiating light, a partial uneven region is provided on a region except a current path on the element surface on which mounting is done. CONSTITUTION:On an N type GaAs substrate 11, an N type Ga1-yAlyAs clad layer 12, a P type Ga1-xAlxAs active layer 13, a P type Ga1-yAlyAs clad layer 14 and GaAs cap layer 15 are grown to be laminated. Next a plurality of striped projection 15' are formed on the uppermost layer that is the cap layer 15, and all over it an Al2O3 oxide film 16 is applied. Subsequently the projection 15' is covered with an electrode 17 on P side extended onto the film 16, and all over the rear surface of the substrate 11 an electrode 18 on N side is attached. By this method strains on mounting is decreased by providing the projection within the cap layer 15 outside the current path, and in addition to decreasing a driving current through decreasing an effective cap layer thickness, a diameter of an oscillating spot light is reduced to a half of a normal value. |
| 公开日期 | 1987-08-14 |
| 申请日期 | 1981-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73886]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | TAKAGI JUNKO,HAYAKAWA TOSHIRO,OOTSUKA NAOTAKA. -. JP1987037903B2. 1987-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。