Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | FUJII HIROAKI; KOBAYASHI KENICHI |
| 发表日期 | 1989-02-15 |
| 专利号 | JP1989042886A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To prevent the property deterioration due to the mask deviation and decrease in yield by a method wherein a current blocking laser and a cap layer laminated through an LPE method for the formation of a current injecting path. CONSTITUTION:A buried type wafer, which is laminated containing up to a melt-back preventive layer 8 through an organic metal thermal decomposition vapour growth, is introduced into a liquid growth oven so as to laminate a current blocking layer 4 of GaAs and a cap layer 5 of GaAs through a liquid growth method (LPE method) for the formation of a refractive index guide structure. Here, the mesa is high enough to be larger than 2mum in height, wherefore the mesa side face and base are sufficiently able to be coated with a GaAs current blocking layer making advantage of the characteristic of an LPE method without any deposition on the upper surface of the mesa. |
| 公开日期 | 1989-02-15 |
| 申请日期 | 1987-08-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73888]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | FUJII HIROAKI,KOBAYASHI KENICHI. Semiconductor laser and manufacture thereof. JP1989042886A. 1989-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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