Semiconductor laser element
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; YAMAMOTO SABUROU; TAKAGI JIYUNKOU; OOTSUKA NAOTAKA |
| 发表日期 | 1982-06-09 |
| 专利号 | JP1982092885A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To oscillate constantly a fundamental horizontal mode only by a method wherein layers such as the p type first clad layer and an n type light guide layer are piled successively, an effective refractive index difference is provided and an oscillated light wave is guided. CONSTITUTION:After an nGaAs laye 16 is grown on a pGaAs substrate 11, a V-shaped concave 10 is formed and the concave is etched in such a manner that the tip of the concave reaches the substrate 1 On the substrate 11 the first clad layer 13, the second clad layer 20, an activated layer 12, a light guide layer 21, the third clad layer 14 and a cap layer 17 are piled successively by a continuous liquid phase growing method. The thickness of the layers mentioned above are controlled in such a manner that the growth of the layer 13 stopped before the V-shaped concave becomes flat and after the growth of the layer 20 the concave becomes flat. With above method the thickness of the layer 20 is the largest at the center of the concave and the layer 20 has the distribution of the thikncess along the horizontal direction. Then an Al crystal mixing ratio is taken large enough and the refractive index difference between the layer 13 and the layer 12 is taken large enough, so that the leakage of the guided light wave into the current limiting layer 16 is eliminated. |
| 公开日期 | 1982-06-09 |
| 申请日期 | 1980-12-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73892]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,YAMAMOTO SABUROU,TAKAGI JIYUNKOU,et al. Semiconductor laser element. JP1982092885A. 1982-06-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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