Semiconductor laser device
文献类型：专利
| 作者 | TARUCHIYA SEIGO; OOTSUKA KENJIYU; KUBODERA KENICHI; IWAMURA HIDETOSHI |
| 发表日期 | 1983-09-19 |
| 专利号 | JP1983157187A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device which generates stable photo pulses even not by a power source of stable frequencies by a method wherein three kinds of semiconductors are laminated as clad layers of conductive type reverse each other, and the active layer at the middle therebetween, and electrodes are arranged so that the direct current generates a non-linear fluctuation in the active layer. CONSTITUTION:An oscillation vertical mode is caused by a method wherein the electrodes 7 are formed into a constitution wherein they are intermittent in the direction rectangular e.g. to the line O-O, and a direct current is supplied into the semiconductor layer 3 as the active layer of a semiconductor laser diode U via electrodes 6 and 7, and semiconductor layers 2, 4 and 5. Accordingly, a non-linear fluctuation is generated in the carrier density based on the direct current, in the semiconductor layer 3 as the active layer, by the non- linear interaction between vertical modes of the oscillation vertical mode, and thereby a non-linear fluctuation generates in the semiconductive dielectric constant as the active layer. Therefore, coupling polarization adjustment is generated, and accordingly the coupling between vertical modes of the oscillation vertical mode is generated. |
| 公开日期 | 1983-09-19 |
| 申请日期 | 1982-03-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73915]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | TARUCHIYA SEIGO,OOTSUKA KENJIYU,KUBODERA KENICHI,et al. Semiconductor laser device. JP1983157187A. 1983-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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