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文献类型：专利
| 作者 | HORIKAWA HIDEAKI; IMANAKA KOICHI; WATANABE AKIRA; SANO KAZUYA |
| 发表日期 | 1989-02-20 |
| 专利号 | JP1989009751B2 |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To enable to manufacture a semiconductor laser of a refractive index guide structure having a current block layer by once liquid phase epitaxial growth by selectively growing layers by utilizing the selective growth of liquid phase epitaxial growth. CONSTITUTION:The upper surface 11a of a P type InP substrate 11 is formed in (100) plane, and a layer 12 of SiO2 is formed on the surface 11a. Then, a stripe window 13 having a stripe window 13 in width of approx. 2mum is extended in the prescribed direction and opened at the etching mask layer 12, the surface 11a exposed at the substrate 11 is etched through the window 13, thereby forming a recess slot 14. Then, the substrate 11 is inserted into a liquid phase epitaxial growth furnace, and an N type InP layer 15, a P type InGaAsP layer 16, a P type InP layer 17, an InGaAsP layer 18 and the second clad layer 19 are sequentially grown by once liquid epitaxial growth. Thus, a semiconductor laser of a refractive index guide structure is obtained by growing thinly on the layer 15 out of the slot, slightly thickly in the slot 14, and bending to a recess downwardly in the slot. |
| 公开日期 | 1989-02-20 |
| 申请日期 | 1983-08-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73921]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,IMANAKA KOICHI,WATANABE AKIRA,et al. -. JP1989009751B2. 1989-02-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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