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文献类型：专利
| 作者 | SAKUMA ISAMU; KAWANO HIDEO |
| 发表日期 | 1987-08-14 |
| 专利号 | JP1987037835B2 |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To manufacture a desired striped buried semiconductor laser by not etching so that the surface of Al0.1Ga0.9As is completely exposed when it is mesa etched with the active layer and liquid phase epitaxially growing thereon. CONSTITUTION:N type Al0.3Ga0.7As layer 12, N type Al0.1Ga0.9As layer 13, P type GaAs active layer 14, P type Al0.3Ga0.7As layer 15 are grown by first epitaxial growth on a substrate 11 formed of N type GaAs layer 1 Then, the layer 15 is mesa etched with a mask in which the groove having a width of 20mum is selected at both sides of a band region formed on the upper surface of the layer 15. This groove has a depth reaching the layer 13, and the layer 13 is exposed only at this part. Then, it is removed in photoresist, the crystal is cleaned, and then liquid crystal epitaxial growth of the N type Al0.3Ga0.7As layer 16 is conducted. Further, the grown layer 16 is converted by Zn diffusion to P type region 17, P type electrode 19 is formed on the surface through an SiO2 film 18, and N type electrode 20 is formed on the back surface of the substrate 11, and a desired striped buried semiconductor laser can be manufactured. |
| 公开日期 | 1987-08-14 |
| 申请日期 | 1979-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73929]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | SAKUMA ISAMU,KAWANO HIDEO. -. JP1987037835B2. 1987-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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