Semiconductor laser element
文献类型：专利
| 作者 | MURATA KAZUHISA; YAMAMOTO SABUROU; HAYASHI HIROSHI; TAKENAKA TAKUO |
| 发表日期 | 1982-12-25 |
| 专利号 | JP1982211791A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To allow a semiconductor laser element to have a higher output, by a method wherein inside a resonator a refractive difference is provided laterally, while in the vicinity of the resonator end surface, light is dispersed toward the outside. CONSTITUTION:The layer having an opposite polarity for restricting a current passage is subjected to etching in order to cut a stripe groove as that the stripe width will be small in the vicinity of resonator end surfaces 20, 21 but large inside the resonator. A crystal layer for laser oscillation is deposited on the surface having the stripe groove. The thickness of an active layer 17 or light- guide layer constituting the crystal layer is formed thick correspondingly to the stripe groove inside the resonator. On a P-GaAs substrate 14, a current-trapping layer 15 made of n-GaAs for restricting the current passage, a P type clad layer 16 made of P-GaAlAs, an active layer 17 made of P- or N-GaAlAs (or GaAs), and N type clad layer 18 made of N-GaAlAs, and an cap layer 19 made of N- GaAs are successively laminated by liquid phase epitaxial growth. |
| 公开日期 | 1982-12-25 |
| 申请日期 | 1981-06-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73934]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | MURATA KAZUHISA,YAMAMOTO SABUROU,HAYASHI HIROSHI,et al. Semiconductor laser element. JP1982211791A. 1982-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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