Semiconductor laser element
文献类型：专利
| 作者 | KURODA TAKAROU; KAJIMURA TAKASHI; KASHIWADA YASUTOSHI; UMEDA JIYUNICHI; AIKI KUNIO |
| 发表日期 | 1985-03-04 |
| 专利号 | JP1985041281A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a laser light of high output having stable lateral basic mode by forming a double hetero laser suspended active layer thickness bent at the active layer to 0.04-0.07mum. CONSTITUTION:The first clad layer 233 having a recess on a substrate 21 having a strip groove, an active layer 24 and the second clad layer 25 are formed. In this case, the first, second clad layers 23, 25 have forbidden band width larger than that of the layer 24 and smaller refractive index than that. Further, the suspended light emitting region thickness of the layer 24 is fored to 0.03- 0.07mum. Thus, a laser light of high output having stable lateral basic mode can be obtained. |
| 公开日期 | 1985-03-04 |
| 申请日期 | 1984-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73947]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KURODA TAKAROU,KAJIMURA TAKASHI,KASHIWADA YASUTOSHI,et al. Semiconductor laser element. JP1985041281A. 1985-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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