Semiconductor laser device
文献类型：专利
| 作者 | OOTA ATSUSHI; KOJIMA KEISUKE; HISAMA KAZUO |
| 发表日期 | 1986-11-12 |
| 专利号 | JP1986255085A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make the oscillation wavelength of laser variable widely and continuously by providing a charping diffraction grating on the overall surface of a waveguide and injecting a current from plural electrodes on the surface of a clad layer. CONSTITUTION:When a current is injected to electrodes 9, 10.13, according to that, the wavelength dependence of valid reflectance of the regions under the electrodes 9.13 of a charping diffraction grating 32 is determined. Laser oscillation is done by the wavelength near the maximum value of the product of those reflectance characteristics. Accordingly, a laser oscillator can be tuned continuously by changing a quantity of the current injected into the electrodes 9.13. Also as the charping diffraction grating 32 is arranged on the surface of a waveguide layer 3 and the electrodes 9.13 are formed on the surface of a clad layer 5, the tuning range of laser oscillation wavelengths can be enlarged. Furthermore, there is no need of cleaving the edge planes in this laser device, so that the manufacture process becomes simple and the yeild can be increased. |
| 公开日期 | 1986-11-12 |
| 申请日期 | 1985-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73957]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OOTA ATSUSHI,KOJIMA KEISUKE,HISAMA KAZUO. Semiconductor laser device. JP1986255085A. 1986-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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