Semiconductor laser
文献类型：专利
| 作者 | ITO TATSUYA |
| 发表日期 | 1986-08-06 |
| 专利号 | JP1986174789A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To suppress leaking currents, by forming stripe shaped grooves in a crystal substrate and a cap layer along a laser axis in a semiconductor laser having a double heterostructure, and diffusing impurities in the approximately entire surface of the cap layer. CONSTITUTION:A stripe shaped groove in a specified shape is formed in an N-GaAs crystal substrate 6. An N-GaAlAs first clad 5, an I-GaAs active layer 4 and a P- GaAlAs second clad layer 3 are laminated so that the groove is buried and the upper surface becomes flat, and a double heterostructure is formed. An N-GaAs cap layer 2 is laminated. By using NH4OH-H2O, the layer 2 is selectively subjected to photoetching. Thus a stripe shaped groove 8 is selectively subjected to photoetching. Thus a stripe shaped groove 8 is formed in the direction of a laser light axis. The depth of the groove 8 is provided so that the layer 3 is exposed. The position of the groove 8 is approximately the same as that of the groove in the substrate. The groove 8 is narrower than the groove in the substrate. Then, P-type impurities such as Zn are diffused. A diffused cross section, which is shallow on the cap layer 2 and deep beneath the groove 8, is obtained. The current does not flow in the edge of the substrate, but flows in the narrow oscillating region and reaches the substrate 6. Therefore, leading currents are decreased. Since deep diffusion is not required, productivity is improved. |
| 公开日期 | 1986-08-06 |
| 申请日期 | 1985-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73961]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | ITO TATSUYA. Semiconductor laser. JP1986174789A. 1986-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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