Semiconductor laser
文献类型：专利
| 作者 | HAMADA HIROYOSHI; HIROYAMA RYOJI; HONDA MASAHARU; SHONO MASAYUKI |
| 发表日期 | 1992-10-20 |
| 专利号 | JP1992296074A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent an operating voltage from increasing by a method wherein a ridge is made to protrude from a block layer. CONSTITUTION:A buffer layer 2, an N-type clad layer 3, an active layer 4, a P-type clad layer 5, a first contact layer 6, and a second contact layer 7 are epitaxially grown on the primary surface 1a of an N-type GaAs substrate 1 in succession. Then, an SiO2 film 13 is formed on the second contact layer 7, and the second contact layer 7, the first contact layer 6, and the P-type clad layer 5 are selectively etched using the SiO2 film 13 as a mask for the formation of a ridge 8. Using an MBE method, a block layer 9 is grown on the P-type clad layer 5 exposed using the SiO2 mask. Then, after the SiO2 film 13 is removed, a cap layer 10 is grown on the protrudent ridge 8 and the block layer 9. Lastly, an Cr film and an Au film are successively evaporated on the cap layer 10, a Cr film, an Sn film, and an Au film are successively evaporated on the primary surface 1b of the substrate 1, and then a P-side electrode 11 and an N-type electrode 12 are formed. |
| 公开日期 | 1992-10-20 |
| 申请日期 | 1991-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73973]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | HAMADA HIROYOSHI,HIROYAMA RYOJI,HONDA MASAHARU,et al. Semiconductor laser. JP1992296074A. 1992-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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