Manufacture of semiconductor laser
文献类型：专利
| 作者 | KOBAYASHI MASAO; KASHIMA YASUMASA; HOSOI YOJI |
| 发表日期 | 1989-07-20 |
| 专利号 | JP1989183183A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate the control of the depth of an etching groove, and to facilitate the control of the thickness and the position of an active layer by so forming a substantially u-shape, and splitting an etching groove in a planar orientation of the bottom of etching in a plane (100) as to split a current block layer. CONSTITUTION:A substrate 1 is etched from a p2 type InP layer 4 to a p1 type InP layer 2, and an etching groove 5 is so formed as to split a current block layer 3. This groove 5 is so formed in a u-shaped section of etching side faces 5a perpendicular to the substrate 1 and an etching bottom 5b parallel to the substrate 1 that the planar orientation of the bottom 5b becomes the same plane (100) as that of the surface 4a of the layer 4. Then, a p-type InP first clad layer 6, a p-type GaInAsP active layer 7, an n-type InP second clad layer 8 are sequentially grown by a liquid growing method on the layer 4 on the layer 3 and the bottom 5b of the groove 5. Thus, the contact time if liquid growth on the bottom 5b is delayed, and the thicknesses of the layers 6, 7 can be easily controlled. |
| 公开日期 | 1989-07-20 |
| 申请日期 | 1988-01-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73978]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KOBAYASHI MASAO,KASHIMA YASUMASA,HOSOI YOJI. Manufacture of semiconductor laser. JP1989183183A. 1989-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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