Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | FUJIMOTO AKIRA |
| 发表日期 | 1989-08-04 |
| 专利号 | JP1989194378A |
| 著作权人 | OMRON TATEISI ELECTRON CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To enable a semiconductor laser with high yield to be produced with a simple process by forming a recessed part on a substrate and by forming double hetero structure using the molecular beam epitaxial method with the recessed part. CONSTITUTION:A recessed part 3 is formed on a substrate 1 and double hetero structure is formed on the substrate 1 with the recessed part 3 using the molecular beam epitaxial method. Then, one part of the double hetero structure is dissolved by the liquid phase epitaxial method to allow an embedded layer 7 to grow. Thus, when double hetero structure is formed on the substrate 1 with the recessed part 3 by the molecular beam epitaxial method, the growth layer reflects the recessed geometry of the substrate 1 and each layer becomes recessed. Thus, this process has an improved reproducibility and embedded hetero structure semiconductor laser can be manufactured with improved yield. |
| 公开日期 | 1989-08-04 |
| 申请日期 | 1988-01-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73981]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRON CO |
| 推荐引用方式 GB/T 7714 | FUJIMOTO AKIRA. Semiconductor laser and manufacture thereof. JP1989194378A. 1989-08-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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