Distributed-feedback semiconductor laser
文献类型：专利
| 作者 | HORI YOSHIKAZU; SATO HISANAO |
| 发表日期 | 1992-02-24 |
| 专利号 | JP1992056377A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed-feedback semiconductor laser |
| 英文摘要 | PURPOSE:To completely oscillate in a single wavelength by a simple method by reducing the refractive index of a first clad layer grounded to an active layer side smaller than that of a second clad layer mounted at a grating layer side. CONSTITUTION:A second clad layer and a first clad layer 7 have as a pair an operation for enclosing a light generated in an optical active layer 6 a guided light. Since an uneven structure is formed in a boundary between a clad layer 3 and a light guide layer 5 having different refractive indexes, a region near the boundary is operated as a grating layer in which the refractive index is periodically distributed, an optical feedback is applied to a light generated in the active layer and propagated laterally as a guide light in a distributed manner to perform a laser oscillation. Here, the first clad layer formed at the active layer side becomes a p-type InP, but the second clad layer formed at the grating layer side becomes an n-type InGaAsP. Accordingly, the refractive index of the first clad layer is lower than that of the second clad layer. In this distributed-feedback semiconductor laser, laser of about 80% is oscillated in a single wavelength in a TE mode. |
| 公开日期 | 1992-02-24 |
| 申请日期 | 1990-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73984]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORI YOSHIKAZU,SATO HISANAO. Distributed-feedback semiconductor laser. JP1992056377A. 1992-02-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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