Semiconductor laser device
文献类型：专利
| 作者 | MACHIDA SUSUMU; YAMAMOTO YOSHIHISA |
| 发表日期 | 1989-07-27 |
| 专利号 | JP1989187893A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To suppress the deterioration of the frequency characteristics caused by the inter-terminal capacitance of a semiconductor laser and oscillate the light of a wide band amplitude squeezed state for providing optical measurement and optical application and improve the S/N ratio by providing a high resistance layer as a series resistor between a p-type or n-type clad layer and an electrode layer or in a p-type or n-type electrode layer itself. CONSTITUTION:A low impurity concentration high resistance layer 27 is inserted between a p-type clad layer 19 and a p-type electrode layer 2 As a series high resistance is provided with the high resistance layer 27 in a semiconductor laser, the deterioration of the effect of a series resistor in a radio frequency range can be avoided and an amplitude squeezed state can be obtained in a wide band so that a wider band width than the conventional technology can be provided. Further, if the electrode layer itself is composed of a low impurity concentration high resistance layer 28, the performance and the effect of the high resistance layer can be the same. |
| 公开日期 | 1989-07-27 |
| 申请日期 | 1988-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73997]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | MACHIDA SUSUMU,YAMAMOTO YOSHIHISA. Semiconductor laser device. JP1989187893A. 1989-07-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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