Semiconductor optical device
文献类型：专利
| 作者 | FUKUDA MITSUO; NISHIDA TOSHIO; TAMAMURA TOSHIAKI; MOTOSUGI TSUNEJI |
| 发表日期 | 1991-05-23 |
| 专利号 | JP1991120883A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical device |
| 英文摘要 | PURPOSE:To reduce photo coupling loss caused by a phase deviation between diffraction grating regions and to enable simple coupling of diffraction grating regions by introducing a specific shift region between the diffraction grating regions and by providing an electrode which enables independent current injection to the shift region alone. CONSTITUTION:A diffraction grating region 7 is provided between a guide layer 4 and a p-type InP clad layer 5, and a phase shift region 8 of lambda/4 is inserted. Among natural lights generated in an active layer 3, only a wavelength corresponding to a Bragg wavelength is selectively amplified, which is decided by a pitch of the diffraction grating and an equivalent refraction factor of the diffraction grating region 7 for laser oscillation. A phase adjustment region length L is not less than 10mum. A central electrode is made to coincide with the phase shift region to enable independent current injection. |
| 公开日期 | 1991-05-23 |
| 申请日期 | 1989-10-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74009]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | FUKUDA MITSUO,NISHIDA TOSHIO,TAMAMURA TOSHIAKI,et al. Semiconductor optical device. JP1991120883A. 1991-05-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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