A semiconductor laser device
文献类型:专利
作者 | SUYAMA, TAKAHIRO; TAKAHASHI, KOSEI; KONDO, MASAFUMI; HAYAKAWA, TOSHIRO |
发表日期 | 1988-11-02 |
专利号 | EP0289308A2 |
著作权人 | SHARP KABUSHIKI KAISHA |
国家 | 欧洲专利局 |
文献子类 | 发明申请 |
其他题名 | A semiconductor laser device |
英文摘要 | A semiconductor laser device comprising an active layer (5), optical guiding layers (4, 6) sandwiching the active layer (5) therebetween, and a cladding layer (3, 7) disposed on each of the optical guiding layers (4, 6), wherein the refractive index of each of the optical guiding layers (4, 6) gradually varies in the direction of the thickness of the optical guiding layer (4, 6),and the thickness of each of the optical guiding layers (4, 6) is set to be 0.5 µm or less. |
公开日期 | 1988-11-02 |
申请日期 | 1988-04-28 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/74018] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | SUYAMA, TAKAHIRO,TAKAHASHI, KOSEI,KONDO, MASAFUMI,et al. A semiconductor laser device. EP0289308A2. 1988-11-02. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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