中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A semiconductor laser device

文献类型:专利

作者SUYAMA, TAKAHIRO; TAKAHASHI, KOSEI; KONDO, MASAFUMI; HAYAKAWA, TOSHIRO
发表日期1988-11-02
专利号EP0289308A2
著作权人SHARP KABUSHIKI KAISHA
国家欧洲专利局
文献子类发明申请
其他题名A semiconductor laser device
英文摘要A semiconductor laser device comprising an active layer (5), optical guiding layers (4, 6) sandwiching the active layer (5) therebetween, and a cladding layer (3, 7) disposed on each of the optical guiding layers (4, 6), wherein the refractive index of each of the optical guiding layers (4, 6) gradually varies in the direction of the thickness of the optical guiding layer (4, 6),and the thickness of each of the optical guiding layers (4, 6) is set to be 0.5 µm or less.
公开日期1988-11-02
申请日期1988-04-28
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/74018]  
专题半导体激光器专利数据库
作者单位SHARP KABUSHIKI KAISHA
推荐引用方式
GB/T 7714
SUYAMA, TAKAHIRO,TAKAHASHI, KOSEI,KONDO, MASAFUMI,et al. A semiconductor laser device. EP0289308A2. 1988-11-02.

入库方式: OAI收割

来源:西安光学精密机械研究所

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