Semiconductor laser device
文献类型：专利
| 作者 | TSUJI SHINJI; MORI TAKAO; DOI KOUNEN; TAKEDA YUTAKA; HIRAO MOTONAO; NAKAMURA MICHIHARU |
| 发表日期 | 1984-05-01 |
| 专利号 | JP1984076492A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device of easy working and excellent characteristics by a method wherein a surface layer which constitutes a semiconductor laser is composed of an InGaAsP layer whose composition is made specific, and mesa etching is performed with alcoholic solution of a halogen. CONSTITUTION:On an InP substrate 1 of one conductivity type, the first InP clad layer 2 serving as a light enclosed layer of the same conductivity as that layer, an In1-xGaxAsyP1-y(x=0.26, y=0.57) active layer 3, the second InP clad layer 2' serving as a light enclosed layer of a different conductivity type from that of the substrate 1, and the InGaAsP layer serving as the surface layer 4 are laminated and epitaxially grown in liquid phase. Where, the surface layer 4 is made of the In1-xGaxAsyP1-y (x=0.26, y=0.57). Thereafter, a mask 5 composed of an SiO2 film of a fixed pattern is provided on the surface layer 4, and the active layer 3 is changed into a stripe form by mesa etching to one half of the layer 2 with the alcoholic solution of the halogen. Thus, reverse mesa etching is made accurate, and the excellent characteristics are obtained. |
| 公开日期 | 1984-05-01 |
| 申请日期 | 1983-09-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74020]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TSUJI SHINJI,MORI TAKAO,DOI KOUNEN,et al. Semiconductor laser device. JP1984076492A. 1984-05-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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