Semiconductor laser
文献类型：专利
| 作者 | NISHIMOTO HIROYUKI |
| 发表日期 | 1987-03-11 |
| 专利号 | JP1987055990A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To modulate at an ultrahigh speed by forming a multilayer film which contains a prescribed conductivity type buffer layer, an active layer, a clad layer and a contact layer on a semiconductor substrate, forming two reverse mesa grooves thereon, and forming electrodes on the top of the mesa between the grooves. CONSTITUTION:An n-type InP buffer layer 4, an InGaAsP active layer 3, a p-type InP clad layer 2, a contact layer 1 are formed by LPE on an n-type InP substrate 5. An SiO2 film 6 is formed by a CVD method on the layer 1, and removed in a stripe shape in (110) direction. Then, two deeper grooves 13 than the layer 3 are formed by etching. After the film 6 is removed, Cr/Au are deposited to simultaneously form an electrode metal 1 on a light emitting region 9 and an electrode 7 of other portion. n-type side electrode 8 is formed on the back of the substrate 5. A semiconductor laser is obtained by cleaving so that the resonance length becomes the prescribed value. |
| 公开日期 | 1987-03-11 |
| 申请日期 | 1985-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74024]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NISHIMOTO HIROYUKI. Semiconductor laser. JP1987055990A. 1987-03-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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