Manufacture of semiconductor laser
文献类型：专利
| 作者 | KAGAWA HITOSHI; YAGI TETSUYA |
| 发表日期 | 1992-01-14 |
| 专利号 | JP1992010484A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the products having uniform characteristics by accurately regulating a thickness of a second clad layer consisting of conductive type AlxGa(1-x)As in the manufacture of a semiconductor laser. CONSTITUTION:On a N-type GaAs substrate 1, a first clad layer 2 of N-type AlxGa(1-x)As, an active layer 3 of p-type AlxGa(1-x)As, a second clad layer 4 of a P-type AlxGa1-xAs, an etching stopper layer 11 of n-type AlxGa(1-x)As, and a third clad layer 12 of N-type AlxGa(1-x)As are laminated in order. Then, a resist 10 is formed on the third clad layer 12, followed by etching for exposing the etching stopper layer 1 Next, when a P-type GaAs buffer layer 7 and an N-type GaAs block layer 8 are formed, N-type impurities are diffused in the etching stopper layer 11 at the same time. As a result, the etching stopper layer 11 is inverted from N-type to P-type and all of the second clad layer 4, the etching stopper layer 11 and the third clad layer 12 become P-type AlxGa(1-x)As so that (D) can be regulated accurately. |
| 公开日期 | 1992-01-14 |
| 申请日期 | 1990-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74033]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAGAWA HITOSHI,YAGI TETSUYA. Manufacture of semiconductor laser. JP1992010484A. 1992-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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