Semiconductor laser
文献类型：专利
| 作者 | GOMYO AKIKO |
| 发表日期 | 1991-05-17 |
| 专利号 | JP1991116795A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent deterioration and optical damages at an edge side and to enable formation of a semiconductor laser of high reliability and high output with good yield at a low cost by forming an active layer of ternary or more III-V compound mixed crystal whose combination length between III-group atom and V-group atom in crystal differs each other and by introducing a specified or more carrier density of silicon (Si) as impurity to at least an active layer near the edge side which becomes a reflection face or a projection face of light. CONSTITUTION:Si is introduced as impurity about 1X10cm or more to ternary or more III-V compound mixed crystal whose combination length between III-group atom and V-group atom differs each other; then, a value of energy gap is recovered which is decided by composition rate of mixed crystal. By using this, Si is introduced to a reflection face or a projection face of light of a semiconductor laser to enlarge energy gap; thereby, a semiconductor laser having a window construction can be acquired. An n-type (Al0.4Ga0.6)0.5In0.5P clad layer 2, a Ga0.85In0.5P active layer 3, a p-type (Al0.4Ga0.6)0.5In0.5P clad layer 4, and a p-type GaAs cap layer 9 are formed one by one on an N-type GaAs substrate 1 by MOVPE method. A V/III rate is made 400 and non-dope. Si is ion-implanted as impurity only to an area near an edge side 8 and annealing is carried out. Thereby, an active layer part at an area near the edge side is allowed to have a carrier concentration of 2X10cm. |
| 公开日期 | 1991-05-17 |
| 申请日期 | 1989-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74035]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | GOMYO AKIKO. Semiconductor laser. JP1991116795A. 1991-05-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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