Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | IWAI NORIHIRO; MATSUMOTO SHIGETO |
| 发表日期 | 1989-07-11 |
| 专利号 | JP1989175291A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To modulate laser output at a high speed and form a laser element by a single MOCVD process, by making a semiconductor substrate have a linearly stepped part which makes a right angle or an acute angle to the surface of its substrate and forming a semi-insulating semiconductor layer on the substrate. CONSTITUTION:A stepped part is provided in the form of a stripe on the surface of an n-type GaAs substrate 1 by etching and, with the exception of the stepped face, a GaAs semi-insulating current blocking layer 2 is formed. Further, the first semiconductor clad layer 3, an active layer 4, the second semiconductor clad layer 5, and a p-type GaAs cap layer 6 are laminated in order and a p-side and an n-side electrodes 7 and 8 are formed. Processes to be carried out after etching are performed in a growth process by a single MOCVD method. As current bottlenecking is performed by the semi-insulating semiconductor layer which is provided selectively with the exception of the stepped face, its laser output is modulated at a high speed and the element is formed by a single MOCVD process. Thus, the element is highly reliable one and can be mass-produced. |
| 公开日期 | 1989-07-11 |
| 申请日期 | 1987-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74045]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IWAI NORIHIRO,MATSUMOTO SHIGETO. Semiconductor laser element and manufacture thereof. JP1989175291A. 1989-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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